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2SJ550S Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SJ550S Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SJ550(L),2SJ550(S) 5 0 –10 –20 –30 –40 –50 10000 1000 3000 300 10 30 100 0 –20 –40 –60 –80 0 0 –4 –8 –12 –16 8 1624 3240 –20 1000 200 500 100 20 10 50 V = 0 f = 1 MHz GS Ciss Coss Crss –100 V = –10 V –25 V –50 V DD I = –15 A D VGS VDS V = –50 V –25 V –10 V DD –0.1 –0.2 –1 –2 –10 –20 –5 –0.5 V = –10 V, V = –30 V PW = 5 µs, duty < 1 % GS DD t f r t d(on) t d(off) t Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics 500 200 100 20 50 10 5 –0.1 –0.3 –3 –1 –10 di / dt = 50 A / µs V = 0, Ta = 25 °C GS –20 Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time |
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