Electronic Components Datasheet Search |
|
2SJ552S Datasheet(PDF) 5 Page - Hitachi Semiconductor |
|
2SJ552S Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SJ552(L),2SJ552(S) 5 0 –10 –20 –30 –40 –50 10000 3000 1000 300 100 0 –20 –40 –60 –80 0 0 –4 –8 –12 –16 –20 –100 16 32 48 64 80 1000 200 500 100 20 50 10 –0.1 –0.3 –1 –10 –30 –100 30 10 DS V GS V V = –10 V –25 V –50 V DD V = 0 f = 1 MHz GS Ciss Coss Crss V = –10 V –25 V –50 V DD –0.1 –0.3 –1 –3 –10 –30 –100 1000 500 200 100 50 20 10 di / dt = 50 A / µs V = 0, Ta = 25 °C GS Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time D I = –20 A –3 td(on) td(off) tr tf V = –10 V, V = –30 V PW = 10 µs, duty < 1 % GS DD Pulse Test |
Similar Part No. - 2SJ552S |
|
Similar Description - 2SJ552S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |