2SJ552S datasheet(5/9 Pages) HITACHI

Part #	2SJ552S

Description	Silicon P Channel MOS FET High Speed Power Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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5 / 9 page

2SJ552(L),2SJ552(S)

5

0

–10

–20

–30

–40

–50

10000

3000

1000

300

100

0

–20

–40

–60

–80

0

–4

–8

–12

–16

–20

–100

16

32

48

64

80

1000

200

500

100

20

50

10

–0.1

–0.3

–1

–10

–30

–100

30

10

DS

V

GS

V

= –10 V

–25 V

–50 V

DD

V

= 0

f = 1 MHz

GS

Ciss

Coss

Crss

V

= –10 V

–25 V

–50 V

DD

–0.1

–0.3

–1

–3

–10

–30

–100

1000

500

200

100

50

20

10

di / dt = 50 A / µs

V

= 0, Ta = 25 °C

GS

Drain to Source Voltage V

(V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nc)

Dynamic Input Characteristics

Drain Current

I

(A)

D

Switching Characteristics

Reverse Drain Current

I

(A)

DR

Body–Drain Diode Reverse

Recovery Time

D

I

= –20 A

–3

td(on)

td(off)

tr

tf

V

= –10 V, V

= –30 V

PW = 10 µs, duty < 1 %

GS

DD

Pulse Test

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2SJ552S Datasheet(PDF) 5 Page - Hitachi Semiconductor

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