ICE60N800D

N-Channel Enhancement Mode MOSFET

Features:

Low

Ultra Low Gate Charge

High dv/dt Capability

High Unclamped Inductive Switching (UIS) Capability

High Peak Current Capability

Increased Transconductance Performance

Optimized Design For High Performance Power Systems

Symbol

Parameter

Value

Unit

Conditions

Continous Drain Current

5

A

Pulsed Drain Current

15

A

Avalanche Energy, Single Pulse

120

mJ

Avalanche Current, Repetitive

2.5

A

dv/dt

MOSFET dv/dt Ruggedness

50

V/ns

Gate Source Voltage

V

Static

AC (f>Hz)

Power Dissipation

57

W

Operating and Storage Temperature

-55 to +150

°C

Mounting Torque

60

Ncm

M 3 & 3.5 screws

Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified

Product Summary

5A

Max

600V

Min

0.65Ω

Typ

21nC

Typ

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com

1

Thermal Characteristics

Thermal Resistance, Junction to Case

-

-

2.2

°C/W

Thermal Resistance, Junction to Ambient

-

-

68

Leaded

Soldering Temperature, Wave Soldering Only

Allowed At Leads

-

-

260

°C

1.6mm (0.063in.) from Case for 10s

Pin Description:

TO-252

D

G

S

Symbol

Parameter

Values

Unit

Conditions

Min

Typ

Max

Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified

Static Characteristics

Drain to Source Breakdown Voltage

600

-

-

V

V

GS(th)

Gate Threshold Voltage

2.1

3

3.9

Zero Gate Voltage Drain Current

-

0.1

1

µA

-

-

100

Gate Source Leakage Current

-

-

100

nA

Drain to Source On-State Resistance

-

0.65

0.8

Ω

-

1.7

-

Gate Resistance

-

6

-

Ω

f = 1 MHz, open drain