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STP607D Datasheet(PDF) 3 Page - Stanson Technology |
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STP607D Datasheet(HTML) 3 Page - Stanson Technology |
3 / 8 page STP607D P Channel Enhancement Mode MOSFET - 10.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP607D 2010. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Uni t Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -60 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -1.5 -3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-48V,VGS=0V -1 uA VDS=-48V,VGS=0V TJ=55℃ -5 On-State Drain Current ID(on) VDS ≧ -10V,VDS=-5V -10 A Drain-source On- Resistance RDS(on) VGS=-10V,ID=-10A 150 160 mΩ Forward Transconductance gfs VDS=-5V,ID=-10A 13 S Diode Forward Voltage VSD IS=-7.8A,VGS=0V -1.0 V Dynamic Total Gate Charge Qg VDS=-30V,VGS=-10V ID=-10A 16 nC Gate-Source Charge Qgs 8 Gate-Drain Charge Qgd 3.0 Input Capacitance Ciss VDS =-30V,VGS=0V F=1MHz 1200 pF Output Capacitance Coss 115 Reverse TransferCapacitance Crss 7 Turn-On Time td(on) tr VGS=-10V,VDS=-30V REGN=3Ω,RL=2.5Ω 9 nS 10 Turn-Off Time td(off) tf 25 11 |
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