STP4189D datasheet(1/9 Pages) STANSON

Part #	STP4189D

Description	P Channel Enhancement Mode MOSFET

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Manufacturer	STANSON [Stanson Technology]

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STP4189D

P Channel Enhancement Mode MOSFET

-

12.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4189D 2009. V1

DESCRIPTION

STP4189D is the P-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. The STP413D has

been designed specially to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM controllers. It has been optimized

for low gate charge, low RDS(ON) and fast switching speed.

PIN CONFIGURATION (D-PAK)

TO-252

TO-251

PART MARKING

Y: Year Code

A: Week Date

Q: Process Code

FEATURE

-40V/-12.0A, RDS(ON) = 18m

(Typ.)

@VGS = -10V

-40V/-8.0A, RDS(ON) = 24m

@VGS =-4.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and

maximum DC current capability

TO-252,TO-251 package design

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