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2SK1669 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK1669 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SK1669 4 5 820 Gate to Source Voltage VGS (V) 4 1 412 16 0 2 3 Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 A ID = 20 A Pulse Test 5 A 0.5 550 Drain Current ID (A) 0.2 0.01 2 10 100 1 0.05 0.1 Static Drain to Source on State Resistance vs. Drain Current 0.02 0.005 20 VGS = 10 V, 15 V Pulse Test 0.2 40 160 Case Temperature TC (°C) 0.16 0.04 0 80 120 0 0.08 0.12 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 10 A –40 20 A ID = 30 A 50 250 Drain Current ID (A) 20 2 15 20 0.5 5 10 Forward Transfer Admittance vs. Drain Current Ta = –25°C VDS = 10 V Pulse Test 0.5 1 10 25°C 75°C |
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