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2SK1933 Datasheet(PDF) 6 Page - Hitachi Semiconductor |
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2SK1933 Datasheet(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SK1933 6 Body to Drain Diode Reverse Recovery Time Reverse Drain Current I (A) DR 0.1 0.2 0.5 1 2 5 10 50 100 200 500 1000 2000 5000 di/dt = 100 A/ s, V = 0 Ta = 25°C µ GS Typical Capacitance vs. Drain to Source Voltage 10000 1000 100 10 010 20 30 40 50 Drain to Source Voltage V (V) DS Ciss Coss Crss V = 0 f = 1 MHz GS Dynamic Input Characteristics 1000 800 600 400 200 40 80 120 160 200 20 16 12 8 4 0 Gate Charge Qg (nc) V = 250 V 400 V 600 V DD V I = 8 A DS D VGS 0 V = 250 V 400 V 600 V DD Switching Characteristics Drain Current I (A) D 0.2 0.5 1 2 5 10 20 5 10 20 50 100 200 500 t t (on) t t (off) V = 10 V, V = 30 V PW = 5 s, duty 1% GS µ DD : < = d f r d |
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