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2SK1948 Datasheet(PDF) 6 Page - Hitachi Semiconductor |
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2SK1948 Datasheet(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SK1948 6 Body to Drain Diode Reverse Recovery Time 1 5 20 100 50 1000 5000 Reverse Drain Current I (A) DR 2000 500 200 100 210 50 di/dt = 100 A/ s, V = 0 Ta = 25°C µ GS Typical Capacitance vs. Drain to Source Voltage 1000 100 10 0 Drain to Source Voltage V (V) DS 10000 10 20 30 40 50 Ciss Coss Crss V = 0 f = 1 MHz GS Dynamic Input Characteristics 80 160 240 320 400 Gate Charge Qg (nc) 100 200 400 500 4 8 12 16 20 0 0 300 I = 50 A D V = 200 V 100 V 50 V DD DD V GS V DS V = 200 V 100 V 50 V Switching Characteristics 0.5 1000 Drain Current I (A) D 500 200 100 50 20 10 12 5 10 20 50 t (off) t (on) V = 10 V, V 30 V PW = 5 s GS µ DD t = : d tr f d |
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