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2SK3288 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SK3288 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 8 page 2SK3288 Silicon N Channel MOS FET High Speed Switching ADE-208-803 (Z) 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (MPAK) Outline 1 2 3 1. Source 2. Gate 3. Drain MPAK D S G |
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