3SK318 datasheet(6/9 Pages) HITACHI

Part #	3SK318

Description	Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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6 / 9 page

3SK318

6

10

5

4

3

2

1.5

1

.8

–2

–3

–4

–5

–10

.6

.4

.2

0

–.2

–.4

–.6

–.8

–1

–1.5

.2

.4

.6 .8 1

2

3 4 5

1.5

10

Scale: 1 / div.

0

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30

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60

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90

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120

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150

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180

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–150

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–90

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–60

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–30

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–120

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Scale: 0.002 / div.

0

°

30

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–150

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10

5

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3

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1.5

1

.8

–2

–3

–4

–5

–10

.6

.4

.2

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–.2

–.4

–.6

–.8

–1

–1.5

.2

.4

.6 .8 1

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3 4 5

1.5

10

Test Condition :

50 to 1000 MHz (50 MHz step)

DS

G2S

V

= 3.5 V , V

= 3 V

I

= 10mA

D

S11 Parameter vs. Frequency

S21 Parameter vs. Frequency

S12 Parameter vs. Frequency

S22 Parameter vs. Frequency

Test Condition :

50 to 1000 MHz (50 MHz step)

DS

G2S

V

= 3.5 V , V

= 3 V

I

= 10mA

D

Test Condition :

50 to 1000 MHz (50 MHz step)

DS

G2S

V

= 3.5 V , V

= 3 V

I = 10mA

D

Test Condition :

50 to 1000 MHz (50 MHz step)

DS

G2S

V

= 3.5 V , V

= 3 V

I

= 10mA

D

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3SK318 Datasheet(PDF) 6 Page - Hitachi Semiconductor

3SK318 Datasheet(HTML) 6 Page - Hitachi Semiconductor

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