STGW60H65DF datasheet(7/13 Pages) STMICROELECTRONICS

Part #	STGW60H65DF

Description	60 A, 650 V field stop trench gate IGBT with very fast diode

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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7 / 13 page

STGW60H65DF

Electrical characteristics

Doc ID 023011 Rev 4

7/13

Figure 14.

Turn-OFF SOA

Figure 15.

Short circuit time & current vs. VGE

Figure 16.

Diode forward current vs. forward

voltage

Figure 17.

Diode forward current vs. junction

temperature

Figure 18.

Reverse recovery current as a

function of diode current slope

Figure 19.

Reverse recovery time as a function

of diode current slope

AM11859v1

0.01

0.1

1

10

100

0.1

1

10

100

IC (A)

VCE (V)

VGE = 15 V, RG = 10Ω

TC = 150 °C

AM11860v1

50

150

250

350

2.5

5

7.5

10

12.5

15

17.5

20

9

101112131415

ISC (A)

tsc (μs)

VGE (V)

VCC= 400V, TC = 25°C

tSC

ISC

AM12731v1

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

10

15

20

25

30

354045505560

VF (V)

IF (A)

Tj =- 40°C

Tj = 25°C

Tj = 150°C

AM12732v1

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50

-25

0

25

50

75

100

125

150

VF (V)

TJ (ºC)

IF = 15 A

IF = 30 A

IF = 60 A

AM12733v1

10

15

20

25

30

35

250

750

1250

1750

Irm (A)

di/dt (A/μs)

VCC= 400 V, VGE= 15 V, IC = 60 A

TJ = 25 °C

TJ = 125 °C ---

AM12734v1

40

50

60

70

80

90

100

110

120

250

750

1250

1750

trr (ns)

di/dt (A/μs)

VCC = 400 V, VGE = 15 V, IC = 60 A

TJ= 25°C

TJ= 125°C

---

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