AP60N03GS_14 datasheet(1/4 Pages) A-POWER

Part #	AP60N03GS

Description	Low On-Resistance

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼

▼ Low On-Resistance

BVDSS

30V

▼

▼ Fast Switching

RDS(ON)

13.5mΩ

▼

▼ Simple Drive Requirement

ID

55A

Description

Absolute Maximum Ratings

Symbol

Units

VDS

V

VGS

V

ID@TC=25℃

A

ID@TC=100℃

A

IDM

A

PD@TC=25℃

W

W/℃

TSTG

℃

TJ

℃

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

2.0

℃/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃/W

Data & specifications subject to change without notice

Thermal Data

Parameter

Storage Temperature Range

Total Power Dissipation

62.5

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

0.5

Continuous Drain Current, VGS @ 10V

35

Pulsed Drain Current

1

215

Gate-Source Voltage

±20

Continuous Drain Current, VGS @ 10V

55

Parameter

Rating

Drain-Source Voltage

30

Pb Free Plating Product

201221041

AP60N03GS/P

G

D

S

G D

S

TO-263(S)

G

D

TO-220(P)

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP60N03GP) is available for low-profile applications.

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AP60N03GS Datasheet(PDF) 1 Page - Advanced Power Electronics Corp.

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