NE32500, NE27200

5

CHIP HANDLING

DIE ATTACHMENT

Die attach operation can be accomplished with Au-Sn (within a 300 ˚C – 10 s) performs in a forming gas

environment.

Epoxy die attach is not recommend.

BONDING

Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter.

Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be

kept to minimum.

As a general rule, the bonding operation should be kept within a 280 ˚C, 2 minutes for all bonding wires.

If longer periods are required, the temperature should be lowered.

PRECAUTIONS

The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only

and does not preclude the necessity of a clean environment.

The bonding equipment should be periodically checked for sources of surge voltage and should be properly

grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static

discharge.

Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky

barrier gate.

CAUTION

The Great Care must be taken in dealing with the devices in this guide.

The reason is that the material of the devices is GaAs (Gallium Arsenide), which is

designated as harmful substance according to the law concerned.

Keep the law concerned and so on, especially in case of removal.