DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE334S01

C BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

1996

©

Document No. P11139EJ3V0DS00 (3rd edition)

Date Published October 1996 P

Printed in Japan

DESCRIPTION

The NE334S01 is a Herero Junction FET that utilizes the

hetero junction to create high mobility electrons. Its excellent

low noise and high associated gain make it suitable for TVRO

and another commercial systems.

FEATURES

•

Super Low Noise Figure & High Associated Gain

•

mm

ORDERING INFORMATION

PART NUMBER

SUPPLYING FORM

MARKING

NE334S01-T1

Tape & reel 1000 pcs./reel

C

NE334S01-T1B

Tape & reel 4000 pcs./reel

°°C)

Drain to Source Voltage

4.0

V

Gate to Source Voltage

–3.0

V

Drain Current

mA

Total Power Dissipation

300

mW

Channel Temperature

125

°C

Storage Temperature

–65 to +125

°C

°°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

2

2.5

V

Drain Current

15

20

mA

Input Power

0

dBm

1.9 ± 0.2

0.4 MAX.

0.125 ± 0.05

4.0 ± 0.2

1.6

2.0

±

0.2

2

4

3

0.65 TYP.

1

C

2.0 ± 0.2

1. Source

2. Drain

3. Source

4. Gate

PACKAGE DIMENSIONS

(Unit: mm)