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TP2104 Datasheet(PDF) 1 Page - Supertex, Inc

Part # TP2104
Description  P-Channel Enhancement Mode Vertical DMOS FETs
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP2104 Datasheet(HTML) 1 Page - Supertex, Inc

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1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
TP2104
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
P-Channel Enhancement Mode
Vertical DMOS FETs
Absolute Maximum Ratings
Pin Configuration
Product Marking
TO-236AB (SOT-23) (K1)
P1LW
W = Code for week sealed
= “Green” Packaging
DRAIN
SOURCE
GATE
Ordering Information
Device
Package Options
BV
DSS/BVDGS
(V)
R
DS(ON)
(max)
(Ω)
V
GS(th)
(max)
(V)
TO-236AB (SOT-23)
TO-92
TP2104
TP2104K1-G
TP2104N3-G
-40
6.0
-2.0
-G indicates package is RoHS compliant (‘Green’)
Parameter
Value
Drain-to-source voltage
BV
DSS
Drain-to-gate voltage
BV
DGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55°C to +150°C
Soldering temperature*
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-236AB (SOT-23) (K1)
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiTP
2 1 0 4
Y Y W W
TO-92 (N3)
Features
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low C
ISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Analog switches
Power management
Telecom switches
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or


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