Preliminary Data Sheet

2

NE650R479A

RECOMMENDED OPERATION LIMITS

Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

6.0

6.0

V

Gain Compression

Gcomp

3.0

dB

Channel Temperature

+125

°C

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Saturated Drain Current

0.35

A

Pinch-off Voltage

–2.5

–0.5

V

Gate to Drain Break Down

Voltage

13

V

Thermal Resistance

Channel to Case

30

50

°C/W

Output Power at 1 dB Gain

Compression Point

26.0

dBm

Drain Current

140

mA

Power Added Efficiency

45

%

Linear Gain

Note 1

Rg = 30

Ω

Note 2

13.0

14.0

dB

Notes 1. Pin = 0 dBm

2. DC performance is 100% testing. RF performance is testing several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.