Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

250

-

-

V

Static Drain-Source On-Resistance

2

-

-

55

mΩ

Gate Threshold Voltage

2.5

-

4

V

Forward Transconductance

-

25

-

S

Drain-Source Leakage Current

-

-

1

uA

Gate-Source Leakage

-

-

±0.1

uA

Total Gate Charge

2

-

168

270

nC

Gate-Source Charge

-

36

-

nC

Gate-Drain ("Miller") Charge

-

68

-

nC

Turn-on Delay Time

2

-

50

-

ns

Rise Time

-

92

-

ns

Turn-off Delay Time

-

250

-

ns

Fall Time

-

105

-

ns

Input Capacitance

-

8370 13400

pF

Output Capacitance

-

1505

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

60

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward On Voltage

2

-

-

1.5

V

Reverse Recovery Time

2

-

320

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

4.7

-

µC

Notes:

1.PW ≦ 10us, duty cycle ≦ 1%

2.Pulse test

3.STch = 25℃，Tch ≦ 150℃

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

2/4

AP95N25W

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT