Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Capable of 2.5V Gate Drive

20V

▼ Lower Gate Charge

600mΩ

▼ Fast Switching Performance

1.2A

▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

℃

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

180

℃/W

Data and specifications subject to change without notice

1

AP2308GEN-HF

Halogen-Free Product

201204255

Parameter

Rating

Drain-Source Voltage

20

Gate-Source Voltage

+8

Continuous Drain Current

1.2

Continuous Drain Current

1

Pulsed Drain Current

1

3.6

Total Power Dissipation

0.69

-55 to 150

Operating Junction Temperature Range

-55 to 150

Thermal Data

Parameter

Storage Temperature Range

D

G

S

SOT-23

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and cost-

effectiveness device.

The

SOT-23

package

is

widely

used

for

commercial-industrial

applications.

G

D

S