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AP2312GN Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP2312GN Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
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2 / 4 page  Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 36 mΩ VGS=4.5V, ID=4A - - 50 mΩ VGS=2.5V, ID=3A - - 75 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance VDS=5V, ID=4A - 16 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=16V ,VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=±12V - - nA Qg Total Gate Charge 2 ID=4A - 5 8 nC Qgs Gate-Source Charge VDS=16V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.3 - nC td(on) Turn-on Delay Time 2 VDS=15V - 8 - ns tr Rise Time ID=1A - 9 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 11 - ns tf Fall Time RD=15Ω -2 - ns Ciss Input Capacitance VGS=0V - 360 580 pF Coss Output Capacitance VDS=20V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 1.5 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=4A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board , t <10sec ; 270 ℃/W when mounted on Min. copper pad. AP2312GN ±100 |
Similar Part No. - AP2312GN_14 |
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Similar Description - AP2312GN_14 |
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