Electronic Components Datasheet Search |
|
AP2322GN-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
|
AP2322GN-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 1.8V gate drive BVDSS 20V ▼ Simple Drive Requirement RDS(ON) 90mΩ ▼ Surface mount package ID 2.5A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 150 ℃ /W Data and specifications subject to change without notice AP2322GN-HF Halogen-Free Product Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage +8 Continuous Drain Current 3, V GS @ 4.5V 2.5 Continuous Drain Current 3, V GS @ 4.5V 2.0 Pulsed Drain Current 1 10 -55 to 150 Storage Temperature Range Total Power Dissipation 0.833 -55 to 150 201009173 Thermal Data Parameter 1 Operating Junction Temperature Range G D S D G S SOT-23 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. |
Similar Part No. - AP2322GN-HF_14 |
|
Similar Description - AP2322GN-HF_14 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |