Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

HM62W8511HJP-12 Datasheet(PDF) 7 Page - Hitachi Semiconductor

Part # HM62W8511HJP-12
Description  4M High Speed SRAM (512-kword x 8-bit)
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HM62W8511HJP-12 Datasheet(HTML) 7 Page - Hitachi Semiconductor

Back Button HM62W8511HJP-12 Datasheet HTML 3Page - Hitachi Semiconductor HM62W8511HJP-12 Datasheet HTML 4Page - Hitachi Semiconductor HM62W8511HJP-12 Datasheet HTML 5Page - Hitachi Semiconductor HM62W8511HJP-12 Datasheet HTML 6Page - Hitachi Semiconductor HM62W8511HJP-12 Datasheet HTML 7Page - Hitachi Semiconductor HM62W8511HJP-12 Datasheet HTML 8Page - Hitachi Semiconductor HM62W8511HJP-12 Datasheet HTML 9Page - Hitachi Semiconductor HM62W8511HJP-12 Datasheet HTML 10Page - Hitachi Semiconductor HM62W8511HJP-12 Datasheet HTML 11Page - Hitachi Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 13 page
background image
HM62W8511H Series
7
Write Cycle
HM62W8511H
-12
-15
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
12
15
ns
Address valid to end of write
t
AW
8
10
ns
Chip select to end of write
t
CW
8—
10
ns
9
Write pulse width
t
WP
8—
10
ns
8
Address setup time
t
AS
0—
0—
ns
6
Write recovery time
t
WR
0—
0—
ns
7
Data to write time overlap
t
DW
6—
7—
ns
Data hold from write time
t
DH
0—
0—
ns
Write disable to output in low-Z
t
OW
3—
3—
ns
1
Output disable to output in high-Z
t
OHZ
—6
—7
ns
1
Write enable to output in high-Z
t
WHZ
—6
—7
ns
1
Note:
1. Transition is measured
±200 mV from steady voltage with Load (B). This parameter is sampled
and not 100% tested.
2. Address should be valid prior to or coincident with
CS transition low.
3.
WE and/or CS must be high during address transition time.
4. if
CS and OE are low during this period, I/O pins are in the output state. Then, the data input
signals of opposite phase to the outputs must not be applied to them.
5. If the
CS low transition occurs simultaneously with the WE low transition or after the WE transition,
output remains a high impedance state.
6. t
AS is measured from the latest address transition to the later of CS or WE going low.
7. t
WR is measured from the earlier of CS or WE going high to the first address transition.
8. A write occurs during the overlap of a low
CS and a low WE. A write begins at the latest transition
among
CS going low and WE going low. A write ends at the earliest transition among CS going
high and
WE going high. t
WP is measured from the beginnig of write to the end of write.
9. t
CW is measured from the later of CS going low to the the end of write.


Similar Part No. - HM62W8511HJP-12

ManufacturerPart #DatasheetDescription
logo
Hitachi Semiconductor
HM62W8511HJPI-15 HITACHI-HM62W8511HJPI-15 Datasheet
63Kb / 13P
   4M High Speed SRAM (512-kword x 8-bit)
More results

Similar Description - HM62W8511HJP-12

ManufacturerPart #DatasheetDescription
logo
Hitachi Semiconductor
HM628511HI HITACHI-HM628511HI Datasheet
64Kb / 13P
   4M High Speed SRAM (512-kword x 8-bit)
logo
Renesas Technology Corp
HM62W8511HC RENESAS-HM62W8511HC Datasheet
171Kb / 16P
   4M High Speed SRAM (512-kword x 8-bit)
logo
Hitachi Semiconductor
HM628511H HITACHI-HM628511H Datasheet
75Kb / 13P
   4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HC HITACHI-HM62W8511HC Datasheet
66Kb / 14P
   4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HI HITACHI-HM62W8511HI Datasheet
63Kb / 13P
   4M High Speed SRAM (512-kword x 8-bit)
logo
Renesas Technology Corp
R1RW0408D RENESAS-R1RW0408D Datasheet
86Kb / 14P
   4M High Speed SRAM (512-kword x 8-bit)
logo
Hitachi Semiconductor
HM628511HC HITACHI-HM628511HC Datasheet
69Kb / 14P
   4M High Speed SRAM (512-kword x 8-bit)
logo
Renesas Technology Corp
R1LV0408C-C RENESAS-R1LV0408C-C Datasheet
97Kb / 14P
   4M SRAM (512-kword X 8-bit)
logo
Hitachi Semiconductor
HM628512ALFP-5 HITACHI-HM628512ALFP-5 Datasheet
552Kb / 18P
   4M SRAM (512 KWORD X 8 BIT)
logo
Renesas Technology Corp
R1RP0408DI RENESAS-R1RP0408DI_15 Datasheet
102Kb / 14P
   R1RP0408DI_15 4M High Speed SRAM (512-kword 횞 8-bit)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com