©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

NPN Epitaxial Silicon Transistor

Symbol

Parameter

Value

Units

Collector-Base Voltage

80

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

6

V

Collector Current (DC)

3

A

Collector Current (Pulse)

6

A

Base Current

1

A

2

W

40

W

Junction Temperature

150

°C

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Voltage

60

V

Collector Cut-off Current

100

µA

Collector Cut-off Current

100

µA

Emitter Cut-off Current

100

µA

DC Current Gain

500

2500

Collector-Emitter Saturation Voltage

1

V

Current Gain Bandwidth Product

30

MHz

Classification

Q

P

O

500 ~ 1000

800 ~ 1500

1200 ~ 2500

KSD1273

• ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires

no Insulator.

1

1.Base

2.Collector

3.Emitter

TO-220F