SI4401DY datasheet(1/8 Pages) VISHAY

Part #	SI4401DY

Description	P-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si4401DY

Document Number: 71226

S09-0322-Rev. D, 02-Mar-09

www.vishay.com

1

P-Channel 40-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFETs

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 40

0.0155 at VGS = - 10 V

- 10.5

0.0225 at VGS = - 4.5 V

- 8.7

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 10.5

- 8.7

A

TA = 70 °C

- 8.3

- 5.9

Pulsed Drain Current

IDM

- 50

Continuous Source Current (Diode Conduction)a

IS

- 2.7

- 1.36

Maximum Power Dissipationa

TA = 25 °C

PD

3.0

1.5

W

TA = 70 °C

1.9

0.95

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

33

42

°C/W

Steady State

70

84

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

16

21

SD

S

D

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4401DY-T1-E3 (Lead (Pb)-free)

Si4401DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

G

D

P-Channel MOSFET

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