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AP4957AGM-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4957AGM-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low On-Resistance BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 26mΩ ▼ Dual P MOSFET Package ID -7.4A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃ /W Data and specifications subject to change without notice 201012232 Thermal Data Parameter Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Storage Temperature Range Continuous Drain Current 3 -5.9 Pulsed Drain Current 1 -30 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 AP4957AGM-HF Rating Halogen-Free Product 1 -30 +20 -7.4 S1 G1 S2 G2 D1 D1 D2 D2 SO-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 D2 S2 G1 D1 S1 |
Similar Part No. - AP4957AGM-HF_14 |
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Similar Description - AP4957AGM-HF_14 |
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