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AP9452GG-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9452GG-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower gate charge BVDSS 20V ▼ Capable of 2.5V gate drive RDS(ON) 50mΩ ▼ Single Drive Requirement ID 4A ▼ RoHS Compliant Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Data and specifications subject to change without notice 200806173 Halogen-Free Product 1 -55 to 150 AP9452GG-HF Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage +16 Continuous Drain Current, VGS @ 4.5V 3 4 Continuous Drain Current, VGS @ 4.5V 3 2.5 -55 to 150 Linear Derating Factor 0.01 Pulsed Drain Current 1 12 Total Power Dissipation 1.25 Thermal Data Parameter Storage Temperature Range Operating Junction Temperature Range Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S D G D S SOT-89 |
Similar Part No. - AP9452GG-HF_14 |
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Similar Description - AP9452GG-HF_14 |
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