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FCD1300N80Z Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FCD1300N80Z Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page August 2014 ©2014 Fairchild Semiconductor Corporation FCD1300N80Z Rev. C0 www.fairchildsemi.com 1 FCD1300N80Z N-Channel SuperFET® II MOSFET 800 V, 4 A, 1.3 Features •RDS(on) = 1.05 Typ.) • Ultra Low Gate Charge (Typ. Qg = 16.2 nC) •Low Eoss (Typ. 1.57 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF) • 100% Avalanche Tested •RoHS Compliant • ESD Improved Capability Applications • AC - DC Power Supply • LED Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCD1300N80Z Unit VDSS Drain to Source Voltage 800 V VGSS Gate to Source Voltage - DC ±20 V - AC (f > 1 Hz) ±30 ID Drain Current - Continuous (TC = 25oC) 4 A - Continuous (TC = 100oC) 2.5 IDM Drain Current - Pulsed (Note 1) 12 A EAS Single Pulsed Avalanche Energy (Note 2) 48 mJ IAR Avalanche Current (Note 1) 0.8 A EAR Repetitive Avalanche Energy (Note 1) 0.26 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25oC) 52 W - Derate Above 25oC0.42 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCD1300N80Z Unit RJC Thermal Resistance, Junction to Case, Max. 2.4 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 100 D-PAK G S D G D S |
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