August 2014

©2014 Fairchild Semiconductor Corporation

FCD1300N80Z Rev. C0

www.fairchildsemi.com

1

FCD1300N80Z

800 V, 4 A, 1.3



Features

• 100% Avalanche Tested

•RoHS Compliant

• ESD Improved Capability

Applications

• AC - DC Power Supply

• LED Lighting

Description

high voltage super-junction (SJ) MOSFET family that is utilizing

charge balance technology for outstanding low on-resistance

and lower gate charge performance. This technology is tailored

to minimize conduction loss, provide superior switching

performance, dv/dt rate and higher avalanche energy. In

addition, internal gate-source ESD diode allows to withstand

over 2kV HBM surge stress.Consequently, SuperFET II

MOSFET is very suitable for the switching power applications

such as Audio, Laptop adapter, Lighting, ATX power and

industrial power applications.



Thermal Characteristics

Symbol

Parameter

FCD1300N80Z

Unit

Drain to Source Voltage

800

V

Gate to Source Voltage

- DC

±20

V

- AC

(f > 1 Hz)

±30

Drain Current

4

A

2.5

Drain Current

- Pulsed

(Note 1)

12

A

Single Pulsed Avalanche Energy

(Note 2)

48

mJ

Avalanche Current

(Note 1)

0.8

A

Repetitive Avalanche Energy

(Note 1)

0.26

mJ

dv/dt

MOSFET dv/dt

100

V/ns

Peak Diode Recovery dv/dt

(Note 3)

20

Power Dissipation

52

W

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol

Parameter

FCD1300N80Z

Unit

Thermal Resistance, Junction to Case, Max.

2.4

Thermal Resistance, Junction to Ambient, Max.

100

D-PAK

G

S

D

G

D

S