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AP9563GK Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP9563GK Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page AP9563GK Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 Q VG -4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1317 2125 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 0 1020 3040 50 Q G , Total Gate Charge (nC) I D = -6A V DS = -32V 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=120 oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 10 20 30 02 46 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =-5V Operation in this area limited by RDS(ON) |
Similar Part No. - AP9563GK_14 |
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Similar Description - AP9563GK_14 |
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