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PF08103A Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part # PF08103A
Description  MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

PF08103A Datasheet(HTML) 4 Page - Hitachi Semiconductor

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PF08103A
4
Absolute Maximum Ratings (Tc = 25
°C)
Item
Symbol
Rating
Unit
Supply voltage
V
DD
8.5
V
Supply current
I
DD GSM
3A
I
DD DCS
3A
V
CTL , VCTL voltage
V
CTL, VCTL
4V
Vapc voltage
Vapc
4
V
Input power
Pin
10
dBm
Operating case temperature
Tc (op)
–30 to +100
°C
Storage temperature
Tstg
–30 to +100
°C
Output power
Pout
GSM
5W
Pout
DCS
3W
Note:
The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band
(1710-1785 MHz).
Electrical Characteristics for DC (Tc = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Drain cutoff current
Ids
20
µA
Vdd = 6.0 V, Vapc = 0 V,
V
CTL = 0 V, VCTL = 0 V
300
µA
Vdd = 8.5 V, Vapc = 0 V,
V
CTL = 0 V, VCTL = 0 V,
Tc = –20 to +80
°C
V
CTL control current
I
CTL
100
160
µAV
CTL = 3.0 V
V
CTL control current
I
CTL
—5080
µAV
CTL = 3.0 V


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