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AP9976GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp.

Part # AP9976GM
Description  Lower On-resistance
Download  4 Pages
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9976GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On-resistance
BVDSS
60V
▼ Simple Drive Requirement
RDS(ON)
20.5mΩ
▼ Fast Switching Characteristic
ID
7.6A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
201106202
1
AP9976GM
Rating
RoHS-compliant Product
60
+20
7.6
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
-55 to 150
Continuous Drain Current
3
6
Pulsed Drain Current
1
40
Storage Temperature Range
2
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S1
G1
S2
G2
D1
D1
D2
D2
G2
D2
S2
G1
D1
S1


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