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AP9985GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9985GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-Resistance BVDSS 40V ▼ Fast Switching Speed RDS(ON) 15mΩ ▼ Surface Mount Package ID 10A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Maximum Thermal Resistance, Junction-ambient 3 50 ℃ /W Data and specifications subject to change without notice 1 AP9985GM RoHS-compliant Product 200811132 Parameter Rating Drain-Source Voltage 40 Gate-Source Voltage ± 20 Continuous Drain Current 3 10 Continuous Drain Current 3 8 Pulsed Drain Current 1 48 Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Thermal Data Parameter Storage Temperature Range Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S S S G D D D D SO-8 G D S |
Similar Part No. - AP9985GM_14 |
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Similar Description - AP9985GM_14 |
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