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HSDL-4200 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard) |
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HSDL-4200 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard) |
1 / 5 page 4-48 H High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp Technical Data HSDL-4200 Series HSDL-4220 30 ° HSDL-4230 17 ° Features • Very High Power TS AlGaAs Technology • 875 nm Wavelength • T-13/4 Package • Low Cost • Very High Intensity: HSDL-4220 - 38 mW/sr HSDL-4230 - 75 mW/sr • Choice of Viewing Angle: HSDL-4220 - 30 ° HSDL-4230 - 17 ° • Low Forward Voltage for Series Operation • High Speed: 40 ns Rise Times • Copper Leadframe for Improved Thermal and Optical Characteristics Applications • Compatible with IrDA SIR Standard • IR Audio • IR Telephones • High Speed IR Communications IR LANs IR Modems IR Dongles • Industrial IR Equipment Package Dimensions • IR Portable Instruments • Interfaces with Crystal Semiconductor CS8130 Infrared Transceiver Description The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gal- lium Arsenide (TS AlGaAs) LED technology. These devices are optimized for speed and efficiency at emission wavelengths of 875 nm. This material produces high radiant efficiency over a wide range of currents up to 500 mA peak current. The HSDL-4200 series of emitters are available in a choice of viewing angles, the HSDL-4230 at 17 ° and the HSDL-4220 at 30 °. Both lamps are packaged in clear T-13/4 (5 mm) packages. 5.00 ± 0.20 (0.197 ± 0.008) 1.27 (0.050) NOM. 1.14 ± 0.20 (0.045 ± 0.008) 8.70 ± 0.20 (0.343 ± 0.008) 2.35 (0.093) MAX. 0.70 (0.028) MAX. 0.50 ± 0.10 (0.020 ± 0.004) SQUARE CATHODE 5.80 ± 0.20 (0.228 ± 0.008) CATHODE 2.54 (0.100) NOM. 31.4 (1.23) MIN. 5964-9642E |
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