www.irf.com

1

10/05/05

IRF6609

Notes

 through ˆ are on page 10

Techniques

Description

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation

of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck

operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particu-

larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Qg

20V

2.0m

46nC

2.6m

DirectFET

™ ISOMETRIC

MT

SQ

SX

ST

MQ

MX

MT

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

i

Ãf

A

f

Pulsed Drain Current

™

Power Dissipation

i

Power Dissipation

f

W

Power Dissipation

f

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Ambient

fj

–––

45

Junction-to-Ambient

gj

12.5

–––

Junction-to-Ambient

hj

20

–––

°C/W

Junction-to-Case

ij

–––

1.4

Junction-to-PCB Mounted

1.0

–––

-40 to + 150

89

0.022

1.8

2.8

Max.

31

25

250

±20

20

150

PD - 95822B