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IRF6609TR1 Datasheet(PDF) 1 Page - International Rectifier |
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IRF6609TR1 Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page www.irf.com 1 10/05/05 IRF6609 HEXFET® Power MOSFET Notes through are on page 10 l Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particu- larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. VDSS RDS(on) max Qg 20V 2.0m Ω@VGS = 10V 46nC 2.6m Ω@VGS = 4.5V DirectFET ISOMETRIC MT SQ SX ST MQ MX MT Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V i ID @ TA = 25°C Continuous Drain Current, VGS @ 10V Ãf A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation i PD @TA = 25°C Power Dissipation f W PD @TA = 70°C Power Dissipation f Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient fj ––– 45 RθJA Junction-to-Ambient gj 12.5 ––– RθJA Junction-to-Ambient hj 20 ––– °C/W RθJC Junction-to-Case ij ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– -40 to + 150 89 0.022 1.8 2.8 Max. 31 25 250 ±20 20 150 PD - 95822B |
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