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2SC3855_2014 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3855_2014 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon Power Transistors 2SC3855 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=50mA ;IB=0 140 V VCEsat Collector-emitter saturation voltage IC=5A IB=0.5A 2.0 V ICBO Collector cut-off current VCB=200V IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=3A ; VCE=4V 50 fT Transition frequency IC=0.5A ; VCE=12V 20 MHz Switching times ton Turn-on time 0.30 μs ts Storage time 2.40 μs tf Fall time IC=5A;RL=12Ω IB1=- IB2=0.5A VCC=60V 0.40 μs |
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