HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6019-B

Issued Date : 1996.04.15

Revised Date : 2000.11.01

Page No. : 1/3

HSMC Product Specification

HJ1109

PNP EPITAXIAL PLANAR TRANSISTOR

Description

• Low frequency high voltage amplifier.

• Complementary pair with HJ1609.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................................... +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................. 1.25 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ................................................................................... -160 V

BVCES Collector to Emitter Voltage ................................................................................ -160 V

BVEBO Emitter to Base Voltage .......................................................................................... -5 V

IC Collector Current ...................................................................................................... -100 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-160

-

-

V

IC=-10uA, IE=0

BVCEO

-160

-

-

V

IC=-1mA , IB=0

BVEBO

-5

-

-

V

IE=-10uA, IC=0

ICBO

-

-

-10

uA

VCB=-140V, IE=0

*VCE(sat)

-

-

-2

V

IC=-30mA, IB=-3mA

VBE

-

-

-1.5

V

VCE=-5V, IC=-10mA

*hFE1

60

-

320

VCE=-5V, IC=-10mA

*hFE2

30

-

-

VCE=-5V, IC=-1mA

FT

-

140

-

MHz

VCE=-5V, IC=-10mA

Cob

-

5.5

-

pF

VCB=-10V, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

B

C

D

Range

60-120

100-200

160-320