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2SD1025_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1025_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon Power Transistors 2SD1025 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 200 V VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=10mA 2.0 V ICBO Collector cut-off current VCB=200V ;IE=0 0.1 mA ICEO Collector cut-off current VCE=200V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=5A ; VCE=3V 1500 30000 fT Transition frequency IC=0.8A ; VCE=10V 20 MHz Switching times ton Turn-on time 2.0 μs ts Storage time 8.0 μs tf Fall time IC=5A IB1=- IB2=10mA RL=5Ω; VBB2=4V 5.0 μs |
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