HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6519

Issued Date : 1993.01.15

Revised Date : 2001.10.15

Page No. : 1/3

HSB564A

HSMC Product Specification

HSB564A

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HSB564A is designed for general purpose low frequency power

amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 800 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ -30 V

VCEO Collector to Emitter Voltage ..................................................................................... -25 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current ............................................................................................................. -1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

-

-

V

IC=-100uA, IE=0

BVCEO

-25

-

-

V

IC=-10mA. IB=0

BVEBO

-5

-

-

V

IE=-100uA, IC=0

ICBO

-

-

-100

nA

VCB=-30V, IE=0

*VCE(sat)

-

-

-0.5

V

IC=-1A, IB=-100mA

*VBE(sat)

-

-

-1.2

V

IC=-1A, IB=-100mA

*hFE

70

-

400

VCE=-1V, IC=-100mA

fT

-

110

-

MHz

VCE=-6V, IC=-10mA, f=100MHz

Cob

-

18

-

pF

VCB=-6V, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE

Rank

O

Y

GR

Range

70-140

120-240

200-400