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BFG97_2015 Datasheet(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG97_2015 Datasheet(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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6 / 14 page  September 1995 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 0.8 0.6 0.2 0 0.4 MBB797 150 T ( C) o s Ptot (W) 1.0 1.2 Fig.5 DC current gain as a function of collector current. VCE = 10 V; Tj =25 °C. handbook, halfpage 0 120 80 40 0 40 120 MBB774 80 I (mA) C h FE Fig.6 Feedback capacitance as a function of collector-emitter voltage. IE = 0; f = 1 MHz; Tj =25 °C. handbook, halfpage V (V) CE MBB798 0 3 2 1 0 10 20 C re (pF) Fig.7 Transition frequency as a function of collector current. VCE = 10 V; f = 500 MHz; Tj =25 °C. handbook, halfpage 040 80 8 6 2 0 4 MBB773 120 I (mA) C (GHz) T f |
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