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BFG310W_2015 Datasheet(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG310W_2015 Datasheet(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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4 / 12 page  9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 4 of 12 Philips Semiconductors BFG310W/XR NPN 14 GHz wideband transistor Fig 1. Power derating curve Fig 2. Collector current as a function of collector-emitter voltage; typical values IC = 0 mA; f = 1 MHz. IC = 5 mA; VCE =3V. Fig 3. Collector-base capacitance as a function of collector-base voltage; typical values Fig 4. Gain as a function of frequency; typical values Tsp (°C) 0 200 150 50 100 001aac177 Ptot (mW) 20 30 40 10 50 70 60 0 001aac178 VCE (V) 06 5 3 14 2 IC (mA) IB = 120 µA 100 µA 80 µA 40 µA 20 µA 60 µA 4 6 8 2 10 0 VCB (V) 05 4 23 1 001aac179 CCBS (pF) 0.17 0.16 0.19 0.18 0.20 0.15 001aac180 20 10 30 40 G (dB) 0 f (MHz) 10 104 103 102 MSG s21 2 |
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