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BFG424F_2015 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG424F_2015 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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3 / 13 page  BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 3 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor 5. Limiting values [1] Tsp is the temperature at the soldering point of the emitter pins. 6. Thermal characteristics [1] Tsp is the temperature at the soldering point of the emitter pins. Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 10 V VCEO collector-emitter voltage open base - 4.5 V VEBO emitter-base voltage open collector - 1 V IC collector current - 30 mA Ptot total power dissipation Tsp ≤ 90 °C [1] - 135 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point Tsp ≤ 90 °C [1] 340 K/W Fig 1. Power derating curve Tsp (°C) 0 160 120 40 80 001aad817 100 50 150 200 Ptot (mW) 0 |
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