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BFG424F_2015 Datasheet(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG424F_2015 Datasheet(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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4 / 13 page  BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 4 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor 7. Characteristics [1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG, see Figure 8. [2] ZS is optimized for noise; ZL is optimized for gain. Table 7: Characteristics Tj =25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0 mA 10 - - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA 4.5 - - V V(BR)EBO open-collector emitter-base breakdown voltage IE = 2.5 µA; IC =0mA 1 - - V ICBO collector-base cut-off current IE = 0 mA; VCB = 4.5 V - - 15 nA hFE DC current gain IC = 25 mA; VCE = 2 V 50 80 120 CCES collector-emitter capacitance VCB = 2 V; f = 1 MHz - 363 - fF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 475 - fF CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 102 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C - 25 - GHz Gp(max) maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C [1] -23 - dB |s21|2 insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C - 18.5 - dB NF noise figure IC = 2 mA; VCE =2V; f = 900 MHz; Γ S = Γopt - 0.8 - dB IC = 2 mA; VCE = 2 V; f = 2 GHz; Γ S = Γopt - 1.2 - dB PL(1dB) output power at 1 dB gain compression IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS =ZS(opt); ZL =ZL(opt) [2] - 12 - dBm IP3 third-order intercept point IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS =ZS(opt); ZL =ZL(opt) [2] - 22 - dBm |
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