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BFG424W_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part # BFG424W_2015
Description  NPN 25 GHz wideband transistor
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

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BFG424W_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 21 March 2006
2 of 13
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
[1]
Tsp is the temperature at the soldering point of the emitter pins.
[2]
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG), see
Figure 8.
2.
Pinning information
3.
Ordering information
4.
Marking
[1]
* = p: made in Hong Kong.
hFE
DC current gain
IC = 25 mA; VCE =2V;
Tj =25 °C
50
80
120
CCBS
collector-base
capacitance
VCB = 2 V; f = 1 MHz
-
105
-
fF
fT
transition frequency
IC = 25 mA; VCE =2V;
f = 2 GHz; Tamb =25 °C
-
25
-
GHz
Gp(max)
maximum power gain
IC = 25 mA; VCE =2V;
f = 2 GHz; Tamb =25 °C
[2] -22
-
dB
NF
noise figure
IC = 2 mA; VCE =2V;
f = 2 GHz;
Γ
S = Γopt
-
1.2
-
dB
Table 1:
Quick reference data …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
1
emitter
2
base
3
emitter
4
collector
21
4
3
mbb159
4
1, 3
2
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BFG424W
-
plastic surface mounted package; reverse pinning;
4 leads
SOT343R
Table 4:
Marking
Type number
Marking code [1]
BFG424W
ND*


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