Electronic Components Datasheet Search |
|
BGD802_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
|
BGD802_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 12 page 2002 Jan 23 2 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier BGD802 FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 860 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). PINNING - SOT115J PIN DESCRIPTION 1 input 2, 3 common 5+VB 7, 8 common 9 output Fig.1 Simplified outline. handbook, halfpage 7 8 9 2 35 1 Side view MSA319 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Gp power gain f = 50 MHz 18 19 dB f = 860 MHz 18.5 − dB Itot total current consumption (DC) VB =24V − 410 mA SYMBOL PARAMETER MIN. MAX. UNIT VB supply voltage − 25 V Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C |
Similar Part No. - BGD802_2015 |
|
Similar Description - BGD802_2015 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |