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SD215DE Datasheet(PDF) 3 Page - TEMIC Semiconductors |
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SD215DE Datasheet(HTML) 3 Page - TEMIC Semiconductors |
3 / 6 page SD211DE/SST211 Series Siliconix S-51850—Rev. F, 14-Apr-97 3 Specificationsa Limits 211 Series 213 Series 215 Series Parameter Symbolb Test Conditionsb Typc Min Max Min Max Min Max Unit Dynamic Forward gfs VDS = 10 V SD Series 11 10 10 10 Forward Transconductance gfs VDS = 10 V VSB = 0 V ID =20mA f=1kHz SST Series 10.5 9 9 9 mS Transconductance gos ID = 20 mA, f = 1 kHz All 0.9 Gate Node Capacitance C(GS+GD+GB) 2.5 3.5 3.5 3.5 Drain Node Capacitance C(GD+DB) VDS = 10 V f=1MHz SD Series 1.1 1.5 1.5 1.5 pF Source Node Ci C(GS+SB) f = 1 MHz VGS = VBS = –15 V 3.7 5.5 5.5 5.5 pF Capacitance C(GS+SB) VGS VBS 15 V SST Series 4.2 Reverse Transfer Capacitance Crss SD Series 0.2 0.5 0.5 0.5 Switching Turn-On Time td(on) SD S i O l 0.5 1 1 1 Turn-On Time tr SD Series Only VSB = 0 V, VIN 0 to 5 V, RG = 25 W 0.6 1 1 1 ns Turn-Off Time td(off) VSB = 0 V, VIN 0 to 5 V, RG = 25 W VDD = 5 V, RL = 680 W 2 ns Turn-Off Time tf DD , L 6 Notes: a. TA = 25_C unless otherwise noted. DMCBA b. B is the body (substrate), and (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. |
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