PMDT670UPE

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 13 September 2011

8 of 16

NXP Semiconductors

PMDT670UPE

20 V, 550 mA dual P-channel Trench MOSFET

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 11. Normalized drain-source on-state resistance as

a function of ambient temperature; typical

values

(1) maximum values

(2) typical values

(3) minimum values

Fig 12. Gate-source threshold voltage as a function of

junction temperature

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

0.0

-2.0

-1.5

-0.5

-1.0

017aaa367

-0.2

-0.3

-0.1

-0.4

-0.5

(A)

0.0

(1)

(2)

-60

180

120

060

017aaa368

1.0

0.5

1.5

2.0

a

0.0

-60

180

120

060

017aaa369

-0.5

-1.0

-1.5

(V)

0.0

(1)

(2)

(3)

017aaa370

-10

-1

10

C

(pF)

1

(1)

(2)

(3)