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STB18NF30 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB18NF30 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page DocID018590 Rev 3 5/15 STB18NF30 Electrical characteristics 15 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 18 A ISDM Source-drain current (pulsed) -72 A VSD Forward on voltage ISD=18 A, VGS=0 V - 1.5 V trr Reverse recovery time ISD=18 A, di/dt=100 A/µs, VDD=100 V (see Figure 15) - 180 400 ns Qrr Reverse recovery charge - 1.5 µC IRRM Reverse recovery current - 16 A trr Reverse recovery time ISD=18 A, di/dt=100 A/µs, VDD=100 V, Tj=150 °C (see Figure 15) - 210 ns Qrr Reverse recovery charge - 1.9 µC IRRM Reverse recovery current - 19 A |
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