11.1

6

IDT6178S

CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM

MILITARY AND COMMERCIAL TEMPERATURE RANGE

± 10%, All Temperature Ranges)

6178S10

(1)

6178S12

6178S15

6178S20/25

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

Unit

Write Cycle

Write Cycle Time

10

—

12

—

15

—

20

—

ns

Address Valid to End-of-Write

8

—

10

—

12

—

14

—

ns

Address Set-up Time

0

—

0

—

0

—

0

—

ns

Write Pulse Width

8

—

10

—

12

—

14

—

ns

Write Recovery Time

0

—

0

—

0

—

0

—

ns

Data Valid to End-of-Write

6

—

8

—

10

—

12

—

ns

Data Hold from Write Time

0

—

0

—

0

—

0

—

ns

Write Enable to Output in High-Z

—

5

—

6

—

7

—

9

ns

Output Active from End-of-Write

0

—

0

—

0

—

0

—

ns

NOTES:

2953 tbl 12

1. 0

°C to +70°C temperature range only.

2. This parameter guaranteed with AC load (Figure 3) by device characterization, but is not production tested.

NOTES:

1.

WE must be HIGH during all address transitions.

2. During this period, I/O pins are in the output state and the input signals must not be applied.

3.

OE is HIGH during a WE controlled write cycle, this requirement does not apply and the

4. Transition is measured

±200mV from steady state.

± 10%, All Temperature Ranges)

6178S10

(1)

6178S12

6178S15

6178S20/25

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

Unit

Clear Cycle

(2)

CLR Pulse Width

12

—

15

—

20

—

25

—

ns

CLR HIGH to WE LOW

5—

5

—

5—

5—

ns

(3)

Power on Reset

50

—

60

—

80

—

100

—

ns

WE HIGH to Clear HIGH

5

—

5

—

5

—

5

—

ns

NOTES:

2953 tbl 13

1. 0

°C to +70°C temperature range only.

2. Recommended duty cycle of 10% maximum.

3. This parameter guaranteed with AC load (Figure 3) by device characterization, but is not production tested.

ADDRESS

WE

(4)

(4)

(4)

(4)

2953 drw 10

(2)

(2)