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IDT7026S20GB Datasheet(PDF) 4 Page - Integrated Device Technology |
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IDT7026S20GB Datasheet(HTML) 4 Page - Integrated Device Technology |
4 / 18 page 6.17 4 IDT7026S/L HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES RECOMMENDED DC OPERATING CONDTIONS Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4.5 5.0 5.5 V GND Supply Voltage 0 0 0 V VIH Input High Voltage 2.2 — 6.0 (2) V VIL Input Low Voltage –0.5 (1) — 0.8 V NOTES: 2939 tbl 06 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 0.5V. CAPACITANCE(1) (TA = +25 °C, f = 1.0MHz) Symbol Parameter Conditions (2) Max. Unit CIN Input Capacitance VIN = 3dv 9 pF COUT Output VOUT = 3dv 10 pF Capacitance NOTES: 2939 tbl 07 1. This parameter is determined by device characterization but is not production tested. 2. 3dV represents the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. ABSOLUTE MAXIMUM RATINGS (1) Symbol Rating Commercial Military Unit VTERM(2) Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V with Respect to GND TA Operating 0 to +70 –55 to +125 °C Temperature TBIAS Temperature –55 to +125 –65 to +135 °C Under Bias TSTG Storage –55 to +125 –65 to +150 °C Temperature IOUT DC Output 50 50 mA Current NOTES: 2939 tbl 05 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 0.5V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.5V. TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL Inputs (1) Outputs CE CE CE CE CE R/ W W W W W OE OE OE OE OE UB UB UB UB UB LB LB LB LB LB SEM SEM SEM SEM SEM I/O8-15 I/O0-7 Mode H X X X X H High-Z High-Z Deselected: Power-Down X X X H H H High-Z High-Z Both Bytes Deselected L L X L H H DATAIN High-Z Write to Upper Byte Only L L X H L H High-Z DATAIN Write to Lower Byte Only L L X L L H DATAIN DATAIN Write to Both Bytes L H L L H H DATAOUT High-Z Read Upper Byte Only L H L H L H High-Z DATAOUT Read Lower Byte Only L H L L L H DATAOUT DATAOUT Read Both Bytes X X H X X X High-Z High-Z Outputs Disabled NOTE: 2939 tbl 03 1. A0L — A13L ≠ A0R — A13R. TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL (1) Inputs Outputs CE CE CE CE CE R/ W W W W W OE OE OE OE OE UB UB UB UB UB LB LB LB LB LB SEM SEM SEM SEM SEM I/O8-15 I/O0-7 Mode H H L X X L DATAOUT DATAOUT Read Data in Semaphore Flag X H L H H L DATAOUT DATAOUT Read Data in Semaphore Flag H X X X L DATAIN DATAIN Write I/O0 into Semaphore Flag X X H H L DATAIN DATAIN Write I/O0 into Semaphore Flag L X X L X L — — Not Allowed L X X X L L — — Not Allowed 2939 tbl 04 NOTE: 1. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O15). These eight semaphores are addressed by A0 - A2. |
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