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IDT7016L20G Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT7016L20G Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 20 page IDT7016S/L HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES 6.13 7 AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(4) IDT7016X12 IDT7016X15 Com'l. Only Com'l. Only Symbol Parameter Min. Max Min. Max. Unit READ CYCLE tRC Read Cycle Time 12 — 15 — ns tAA Address Access Time — 12 — 15 ns tACE Chip Enable Access Time (3) —12 — 15 ns tAOE Output Enable Access Time — 8 — 10 ns tOH Output Hold from Address Change 3 — 3 — ns tLZ Output Low-Z Time (1, 2) 3— 3 — ns tHZ Output High-Z Time (1, 2) —10 — 10 ns tPU Chip Enable to Power Up Time (2) 0— 0 — ns tPD Chip Disable to Power Down Time (2) —12 — 15 ns tSOP Semaphore Flag Update Pulse ( OE or SEM)10 — 10 — ns tSAA Semaphore Address Access Time — 12 — 15 ns IDT7016X20 IDT7016X25 IDT7016X35 Symbol Parameter Min. Max. Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 20 — 25 — 35 — ns tAA Address Access Time — 20 — 25 — 35 ns tACE Chip Enable Access Time (3) —20—25 —35 ns tAOE Output Enable Access Time — 12 — 13 — 20 ns tOH Output Hold from Address Change 3 — 3 — 3 — ns tLZ Output Low-Z Time (1, 2) 3— 3— 3— ns tHZ Output High-Z Time (1, 2) —12—15 —20 ns tPU Chip Enable to Power Up Time (2) 0— 0— 0— ns tPD Chip Disable to Power Down Time (2) —20—25 —35 ns tSOP Semaphore Flag Update Pulse ( OE or SEM) 10—10 —15— ns tSAA Semaphore Address Access Time — 20 — 25 — 35 ns NOTES: 3190 tbl 11 1. Transition is measured ±200mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization but not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. 4. "X" in part numbers indicates power rating (S or L). |
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