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IDT71V016SA10BFI8 Datasheet(PDF) 3 Page - Integrated Device Technology |
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IDT71V016SA10BFI8 Datasheet(HTML) 3 Page - Integrated Device Technology |
3 / 9 page 6.42 3 IDT71V016SA, 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges Symbol Parameter 71V016SA10 71V016SA12 71V016SA15 71V016SA20 Unit Com'l Only Com'l Ind Com'l Ind Com'l Ind ICC Dynamic Operating Current CS ≤ VLC, Outputs Open, VDD = Max., f = fMAX(3) Max. 160 150 160 130 130 120 120 mA Typ.(4) 125 120 -- 110 -- 110 -- ISB Dynamic Standby Power Supply Current CS ≥ VHC, Outputs Open, VDD = Max., f = fMAX(3) 45 40 45 35 35 30 30 mA ISB1 Full Standby Power Supply Current (static) CS ≥ VHC, Outputs Open, VDD = Max., f = 0(3) 10 10 10 10 10 10 10 mA 3834 tbl 08 Absolute Maximum Ratings(1) Recommended Operating Temperature and Supply Voltage DC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges) Capacitance (TA = +25°C, f = 1.0MHz, SOJ package) Recommended DC Operating Conditions DC Electrical Characteristics(1,2) (VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V) NOTE: 1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. NOTES: 1. For 71V016SA10 only. 2. For all speed grades except 71V016SA10. 3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle. 4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle. NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. NOTES: 1. All values are maximum guaranteed values. 2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High). 3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing . 4. Typical values are measured at 3.3V, 25°C and with equal read and write cycles. Symbol Rating Value Unit VDD Supply Voltage Relative to VSS –0.5 to +4.6 V VIN, VOUT Terminal Voltage Relative to VSS –0.5 to VDD+0.5 V TBIAS Temperature Under Bias –55 to +125 oC TSTG Storage Temperature –55 to +125 oC PT Power Dissipation 1.25 W IOUT DC Output Current 50 mA 3834 tbl 03 Grade Temperature VSS VDD Commercial 0°C to +70°C 0V See Below Industrial -40°C to +85°C 0V See Below 3834 tbl 04 Symbol Parameter Min. Typ. Max. Unit VDD (1) Supply Voltage 3.15 3.3 3.6 V VDD (2) Supply Voltage 3.0 3.3 3.6 V Vss Ground 0 0 0 V VIH Input High Voltage 2.0 ____ VDD+0.3(3) V VIL Input Low Voltage –0.3 (4) ____ 0.8 V 3834 tbl 05 Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 6 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 3834 tbl 06 Symbol Parameter Test Condition IDT71V016SA Unit Min. Max. |ILI| Input Leakage Current VDD = Max., VIN = VSS to VDD ___ 5µ A |ILO| Output Leakage Current VDD = Max., CS = VIH, VOUT = VSS to VDD ___ 5µ A VOL Output Low Voltage IOL = 8mA, VDD = Min. ___ 0.4 V VOH Output High Voltage IOH = –4mA, VDD = Min. 2.4 ___ V 3834 tbl 07 |
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