IDT71V016SA10BFI8 datasheet(3/9 Pages) IDT

Part #	IDT71V016SA10BFI8

Description	3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

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Manufacturer	IDT [Integrated Device Technology]

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IDT71V016SA, 3.3V CMOS Static RAM

1 Meg (64K x 16-Bit)

Commercial and Industrial Temperature Ranges

Symbol

Parameter

71V016SA10

71V016SA12

71V016SA15

71V016SA20

Unit

Com'l Only

Com'l

Ind

Com'l

Ind

Com'l

Ind

ICC

Dynamic Operating Current

CS

≤ VLC, Outputs Open, VDD = Max., f = fMAX(3)

Max.

160

150

160

130

120

mA

Typ.(4)

125

120

--

110

--

110

--

ISB

Dynamic Standby Power Supply Current

CS

≥ VHC, Outputs Open, VDD = Max., f = fMAX(3)

45

40

45

35

30

mA

ISB1

Full Standby Power Supply Current (static)

CS

≥ VHC, Outputs Open, VDD = Max., f = 0(3)

10

mA

3834 tbl 08

Absolute Maximum Ratings(1)

Recommended Operating

Temperature and Supply Voltage

DC Electrical Characteristics

(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)

Capacitance

(TA = +25°C, f = 1.0MHz, SOJ package)

Recommended DC Operating

Conditions

DC Electrical Characteristics(1,2)

(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)

NOTE:

1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause

permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

NOTES:

1. For 71V016SA10 only.

2. For all speed grades except 71V016SA10.

3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.

4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

NOTES:

1. All values are maximum guaranteed values.

2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).

3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .

4. Typical values are measured at 3.3V, 25°C and with equal read and write cycles.

Symbol

Rating

Value

Unit

VDD

Supply Voltage Relative to

VSS

–0.5 to +4.6

V

VIN, VOUT

Terminal Voltage Relative

to VSS

–0.5 to VDD+0.5

V

TBIAS

Temperature Under Bias

–55 to +125

oC

TSTG

Storage Temperature

–55 to +125

oC

PT

Power Dissipation

1.25

W

IOUT

DC Output Current

50

mA

3834 tbl 03

Grade

Temperature

VSS

VDD

Commercial

0°C to +70°C

0V

See Below

Industrial

-40°C to +85°C

0V

See Below

3834 tbl 04

Symbol

Parameter

Min.

Typ.

Max.

Unit

VDD

(1)

Supply Voltage

3.15

3.3

3.6

V

VDD

(2)

Supply Voltage

3.0

3.3

3.6

V

Vss

Ground

0

V

VIH

Input High Voltage

2.0

____

VDD+0.3(3)

V

VIL

Input Low Voltage

–0.3

(4)

____

0.8

V

3834 tbl 05

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

6

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

3834 tbl 06

Symbol

Parameter

Test Condition

IDT71V016SA

Unit

Min.

Max.

|ILI|

Input Leakage Current

VDD = Max., VIN = VSS to VDD

___

5µ A

|ILO|

Output Leakage Current

VDD = Max.,

CS = VIH, VOUT = VSS to VDD

___

5µ A

VOL

Output Low Voltage

IOL = 8mA, VDD = Min.

___

0.4

V

VOH

Output High Voltage

IOH = –4mA, VDD = Min.

2.4

___

V

3834 tbl 07

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