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IDT6198L25YB Datasheet(PDF) 5 Page - Integrated Device Technology |
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IDT6198L25YB Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 8 page 6.3 5 IDT6198S/L CMOS STATIC RAM 64K (16K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges) 6198S15 (1) 6198S20 6198S25 6198S35 6198S45/55 (2) 6198S70/85(2) 6198L15 (1) 6198L20 6198L25 6198L35 6198L45/55 (2) 6198L70/85(2) Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Read Cycle tRC Read Cycle Time 15 — 20 — 25 — 35 — 45/55 — 70/85 — ns tAA Address Access Time — 15 — 19 — 25 — 35 — 45/55 — 70/85 ns tACS Chip Select Access Time — 15 — 20 — 25 — 35 — 45/55 — 70/85 ns tCLZ (3) Chip Select to Output in Low-Z 5 — 5 — 5 — 5 — 5 — 5 — ns tOE Output Enable to Output Valid — 8 — 9 — 11 — 18 — 25/35 — 45/55 ns tOLZ (3) Output Enable to Output in Low-Z 5 — 5 — 5 — 5 — 5 — 5 — ns tCHZ (3) Chip Select to Output in High-Z 2 7 2 8 2 10 2 14 — 15/20 — 25/30 ns tOHZ (3) Output Disable to Output in High-Z 2 7 2 8 2 9 2 15 — 15/20 — 25/30 ns tOH Output Hold from Address Change 5 — 5 — 2 — 5 — 5 — 5 — ns tPU (3) Chip Select to Power Up Time 0 — 0 — 0 — 0 — 0 — 0 — ns tPD (3) Chip Deselect to Power Down Time — 15 — 20 — 25 — 35 — 45/55 — 70/85 ns NOTES: 2987 tbl 11 1. 0 ° to +70°C temperature range only. 2. –55 °C to +125°C temperature range only. 3. This parameter is guaranteed by device characterization but is not production tested. NOTES: 1. WE is HIGH for Read cycle. 2. Device is continuously selected, CS is LOW. 3. Address valid prior to or coincident with CS transition LOW. 4. OE is LOW. 5. Transition is measured ±200mV from steady state voltage. ADDRESS CS DATAOUT OE 2987 drw 07 tRC tAA tOH tACS tCLZ (5) tCHZ (5) tOE tOLZ (5) tOHZ (5) DATA VALID TIMING WAVEFORM OF READ CYCLE NO. 1 (1) |
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